26 citations · 26 across the 4 of their papers we have counts for
5 papers
Voltage-driven transition from steady-state fluctuations to phase-transition noise in nanoscale VO devices
Sebastian Werner Schmid, Zoltán Balogh, Botond Sánta +6
We investigate the electrically driven metal-to-insulator transition (MIT) in nanoscale vanadium dioxide (VO) Mott memristor through noise spectroscopy and two-dimensional resi…
Benchmarking stochasticity behind reproducibility: denoising strategies in TaO memristors
Anna Nyáry, Zoltán Balogh, Botond Sánta +5
Reproducibility, endurance, driftless data retention, and fine resolution of the programmable conductance weights are key technological requirements against memristive artificial s…
Picosecond Femtojoule Resistive Switching in Nanoscale VO Memristors
S. W. Schmid, L. Pósa, T. N. Török +8
Beyond-Moore computing technologies are expected to provide a sustainable alternative to the von Neumann approach not only due to their down-scaling potential but also via exploiti…
Voltage-time dilemma and stochastic threshold voltage variation in pure silver atomic switches
Anna Nyáry, Zoltán Balogh, Máté Vigh +3
The formation and dissolution of silver nanowires plays a fundamental role in a broad range of resistive switching devices, fundamentally relying on the electrochemical metallizati…
1/f noise spectroscopy and noise tailoring of nanoelectronic devices
Zoltán Balogh, Gréta Mezei, László Pósa +3
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and sing…