S-ALSA: Co-Design of Adiabatic Logic-based Sensing and Balanced Bit-Cells for Secure and Energy-Efficient MRAM

Wu Yang, Amit Degada, Himanshu Thapliyal

Magnetoresistive Random Access Memory (MRAM) technologies such as Spin-Transfer Torque (STT-MRAM) and Spin-Orbit Torque assisted (SOT-STT-MRAM) offer nonvolatility and low leakage,…