253 citations · 280 across the 3 of their papers we have counts for
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cond-mat.mes-hall2021★ 5 cited
An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
D. Tjeertes, A. Vela, T. J. F. Verstijnen +6
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. Th…
cond-mat.mes-hall2017★ 253 cited
Epitaxy of Advanced Nanowire Quantum Devices
Sasa Gazibegovic, Diana Car, Hao Zhang +20
Semiconductor nanowires provide an ideal platform for various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasi-particles can e…