22 citations · 22 across the 4 of their papers we have counts for
5 papers · 1 filter
Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects
Jiali He, Ursula Ludacka, Kasper A. Hunnestad +12
Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and c…
Non-destructive tomographic nanoscale imaging of ferroelectric domain walls
Jiali He, Manuel Zahn, Ivan N. Ushakov +8
Extraordinary physical properties arise at polar interfaces in oxide materials, including the emergence of two-dimensional electron gases, sheet-superconductivity, and multiferroic…
Confinement-driven inverse domain scaling in polycrystalline ErMnO3
Jan Schultheiß, Fei Xue, Erik Roede +5
The research on topological phenomena in ferroelectric materials has revolutionized the way we understand polar order. Intriguing examples are polar skyrmions, vortex/anti-vortex s…
The third dimension of ferroelectric domain walls
Erik D. Roede, Konstantin Shapovalov, Thomas J. Moran +7
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small…
Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation
Erik D. Roede, Aleksander B. Mosberg, Donald M. Evans +4
Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO. Surface charging is…