activity
20212025
most citedUnconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

34 citations · 40 across the 5 of their papers we have counts for

collaborators

5 papers

cs.LG2025

Learning without Isolation: Pathway Protection for Continual Learning

Zhikang Chen, Abudukelimu Wuerkaixi, Sen Cui +10

Deep networks are prone to catastrophic forgetting during sequential task learning, i.e., losing the knowledge about old tasks upon learning new tasks. To this end, continual learn…

cond-mat.mtrl-sci2023★ 34 cited

Unconventional ferroelectric domain switching dynamics in CuInP2S6 from first principles

Ri He, Hua Wang, Fucai Liu +3

The switching dynamics of ferroelectric materials is a crucial intrinsic property which directly affects the operation and performance of ferroelectric devices. In conventional fer…

physics.app-ph2023

Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors

Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue +16

Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can…

cond-mat.mtrl-sci2023★ 1 cited

An efficient model algorithm for two-dimensional field-effect transistors

Zhao-Yi Yan, Zhan Hou, Fan Wu +9

Two-dimensional materials-based field-effect transistors (2DM-FETs) exhibit both ambipolar and unipolar transport types. To physically and compactly cover both cases, we put forwar…

physics.comp-ph2021★ 5 cited

Charged Oxygen Vacancy Induced Ferroelectric Structure Transition in Hafnium Oxide

Ri He, Hongyu Wu, Shi Liu +3

The discovery of ferroelectric HfO2 in thin films and more recently in bulk is an important breakthrough because of its silicon-compatibility and unexpectedly persistent polarizati…