most citedA new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

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physics.ins-det2021★ 44 cited

A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Richard Opio Ocaya, Fahrettin Yakuphanoglu

We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of a metal-semiconductor diode. We sho…