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cond-mat.dis-nn2022
An Atomistic Model of Field-Induced Resistive Switching in Valence Change Memory
Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović
In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field.…
cond-mat.mtrl-sci2022★ 5 cited
An Atomistic Modelling Framework for Valence Change Memory Cells
Manasa Kaniselvan, Mathieu Luisier, Marko Mladenović
We present a framework dedicated to modelling the resistive switching operation of Valence Change Memory (VCM) cells. The method combines an atomistic description of the device str…