most citedAn efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations

26 citations · 47 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2021★ 21 cited

Vertical GaN Devices: Process and Reliability

Shuzhen You, Karen Geens, Matteo Borga +14

This paper reviews recent progress and key challenges in process and reliability for high-performance vertical GaN transistors and diodes, focusing on the 200 mm CMOS-compatible te…

cond-mat.mes-hall2017★ 26 cited

An efficient tight-binding mode-space NEGF model enabling up to million atoms III-V nanowire MOSFETs and TFETs simulations

Aryan Afzalian, Tim Vasen, Peter Ramvall +1

We report the capability to simulate in a quantum mechanical tight-binding (TB) atomistic fashion NW devices featuring several hundred to millions of atoms and diameter up to 18 nm…