Improved Gradual Resistive Switching Range and 1000x On/Off Ratio in HfOx RRAM Achieved with a $G{e}_{2}S{b}_{2}T{e}_5$ Thermal Barrier

Raisul Islam, Shengjun Qin, Sanchit Deshmukh +7

Gradual switching between multiple resistance levels is desirable for analog in-memory computing using resistive random-access memory (RRAM). However, the filamentary switching of…