30 citations · 57 across the 4 of their papers we have counts for
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Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
Study and characterization of GaN MOS capacitors: planar versus trench topographies
K. Mukherjee, C. De Santi, S. You +9
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…
Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
A. Nardo, C. De Santi, C. Koller +5
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures.…
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Z. Gao, M. Meneghini, F. Rampazzo +4
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and p…