12 citations · 17 across the 2 of their papers we have counts for
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physics.app-ph2022★ 5 cited
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
physics.app-ph2021★ 12 cited
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Z. Gao, M. Meneghini, F. Rampazzo +4
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and p…