12 citations · 18 across the 2 of their papers we have counts for
2 papers
physics.app-ph2021★ 6 cited
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Z. Gao, F. Rampazzo, M. Meneghini +5
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and…
physics.app-ph2021★ 12 cited
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Z. Gao, M. Meneghini, F. Rampazzo +4
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and p…