12 citations · 29 across the 4 of their papers we have counts for
4 papers
Impact of Doping and Geometry on Breakdown Voltage of Semi-Vertical GaN-on-Si MOS Capacitors
D. Favero, C. De Santi, K. Mukherjee +9
For the development of reliable vertical GaN transistors, a detailed analysis of the robustness of the gate stack is necessary, as a function of the process parameters and material…
Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Zhan Gao, Matteo Meneghini, Kathia Harrouche +9
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gat…
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Z. Gao, F. Rampazzo, M. Meneghini +5
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and…
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration
Z. Gao, M. Meneghini, F. Rampazzo +4
The reliability of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration was investigated by means of different stress tests. Firstly, DC and p…