6 citations · 12 across the 2 of their papers we have counts for
2 papers
physics.app-ph2021★ 6 cited
Short Term Reliability and Robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Zhan Gao, Matteo Meneghini, Kathia Harrouche +9
Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gat…
physics.app-ph2021★ 6 cited
Degradation mechanism of 0.15 um AlGaN/GaN HEMTs: effects of hot electrons
Z. Gao, F. Rampazzo, M. Meneghini +5
The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and…