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20152024
most citedPseudo-magnetic field-induced ultra-slow carrier dynamics in periodically strained graphene

66 citations · 194 across the 9 of their papers we have counts for

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Showing 2021Show all

5 papers · 1 filter

cond-mat.mes-hall2021★ 10 cited

Triaxially strained suspended graphene for large-area pseudo-magnetic fields

M. Luo, H. Sun, Z. Qi +11

Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical…

physics.optics2021★ 31 cited

Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks

Daniel Burt, Hyo-Jun Joo, Yongduck Jung +3

GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performa…

physics.optics2021★ 48 cited

1D photonic crystal direct bandgap GeSn-on-insulator laser

Hyo-Jun Joo, Youngmin Kim, Daniel Burt +12

GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all G…

cond-mat.mes-hall2021★ 66 cited

Pseudo-magnetic field-induced ultra-slow carrier dynamics in periodically strained graphene

Dong-Ho Kang, Hao Sun, Manlin Luo +13

The creation of pseudo-magnetic fields in strained graphene has emerged as a promising route to allow observing intriguing physical phenomena that would be unattainable with labora…

physics.optics2021★ 5 cited

Enhanced GeSn Microdisk Lasers Directly Released on Si

Youngmin Kim, Simone Assali, Daniel Burt +6

GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has…