activity
20212023
most cited1D photonic crystal direct bandgap GeSn-on-insulator laser

48 citations · 101 across the 6 of their papers we have counts for

collaborators

6 papers

physics.optics2023★ 1 cited

Extended-SWIR GeSn LEDs with reduced footprint and power consumption

Mahmoud R. M. Atalla, Youngmin Kim, Simone Assali +3

CMOS-compatible short- and mid-wave infrared emitters are highly coveted for the monolithic integration of silicon-based photonic and electronic integrated circuits to serve a myri…

physics.optics2022★ 6 cited

Second-harmonic generation in germanium-on-insulator from visible to telecom wavelengths

Yadong Wang, Daniel Burt, Kunze Lu +1

The second-order process underpins many important nonlinear optical applications in the field of classical and quantum optics. Generally, the process manifests itse…

cond-mat.mes-hall2021★ 10 cited

Triaxially strained suspended graphene for large-area pseudo-magnetic fields

M. Luo, H. Sun, Z. Qi +11

Strain-engineered graphene has garnered much attention recently owing to the possibilities of creating substantial energy gaps enabled by pseudo-magnetic fields. While theoretical…

physics.optics2021★ 31 cited

Strain-relaxed GeSn-on-Insulator (GeSnOI) microdisks

Daniel Burt, Hyo-Jun Joo, Yongduck Jung +3

GeSn alloys offer a promising route towards a CMOS compatible light source and the realization of electronic-photonic integrated circuits. One tactic to improve the lasing performa…

physics.optics2021★ 48 cited

1D photonic crystal direct bandgap GeSn-on-insulator laser

Hyo-Jun Joo, Youngmin Kim, Daniel Burt +12

GeSn alloys have been regarded as a potential lasing material for a complementary metal-oxide-semiconductor (CMOS)-compatible light source. Despite their remarkable progress, all G…

physics.optics2021★ 5 cited

Enhanced GeSn Microdisk Lasers Directly Released on Si

Youngmin Kim, Simone Assali, Daniel Burt +6

GeSn alloys are promising candidates for complementary metal-oxide-semiconductor (CMOS)-compatible, tunable lasers. Relaxation of residual compressive strain in epitaxial GeSn has…