13 citations · 36 across the 6 of their papers we have counts for
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cond-mat.mes-hall2022
Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
Zhenzhen Kong, Zonghu Li, Gang Cao +15
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1…
cond-mat.mes-hall2010★ 9 cited
Weak antilocalization effect of high-mobility two-dimensional electron gas in inversion layer on p-type HgCdTe
Rui Yang, Guolin Yu, Kuanghong Gao +6
Magnetoconductance of a gated two-dimensional electron gas (2DEG) in the inversion layer on p-type HgCdTe crystal is investigated. At strong magnetic fields, characteristic feature…