activity
20212023
most citedEfficient Probabilistic Computing with Stochastic Perovskite Nickelates

38 citations · 59 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.str-el2023

Hydrogen-induced tunable remanent polarization in a perovskite nickelate

Yifan Yuan, Michele Kotiuga, Tae Joon Park +18

Materials with field-tunable polarization are of broad interest to condensed matter sciences and solid-state device technologies. Here, using hydrogen (H) donor doping, we modify t…

physics.app-ph2023

Infrared Nanoimaging of Hydrogenated Perovskite Nickelate Synaptic Devices

Sampath Gamage, Sukriti Manna, Marc Zajac +13

Solid-state devices made from correlated oxides such as perovskite nickelates are promising for neuromorphic computing by mimicking biological synaptic function. However, comprehen…

physics.optics2023★ 8 cited

Electrically tunable VO2-metal metasurface for mid-infrared switching, limiting, and nonlinear isolation

Jonathan King, Chenghao Wan, Tae Joon Park +4

We demonstrate an electrically controlled metal-VO2 metasurface for the mid-wave infrared that simultaneously functions as a tunable optical switch, an optical limiter with a tunab…

cond-mat.mtrl-sci2022★ 38 cited

Efficient Probabilistic Computing with Stochastic Perovskite Nickelates

Tae Joon Park, Kemal Selcuk, Hai-Tian Zhang +8

Probabilistic computing has emerged as a viable approach to solve hard optimization problems. Devices with inherent stochasticity can greatly simplify their implementation in elect…

cond-mat.mtrl-sci2021★ 13 cited

Proton distribution visualization in perovskite nickelate devices utilizing nanofocused X-rays

Ivan A. Zaluzhnyy, Peter O. Sprau, Richard Tran +17

We use a 30-nm x-ray beam to study the spatially resolved properties of a SmNiO-based nanodevice that is doped with protons. The x-ray absorption spectra supported by density-f…

physics.app-ph2021

First Demonstration of Robust Tri-Gate \b{eta}-Ga2O3 Nano-membrane Field-Effect Transistors Operated Up to 400 °C

Hagyoul Bae, Tae Joon Park, Jinhyun Noh +4

Nano-membrane tri-gate beta-gallium oxide (\b{eta}-Ga2O3) field-effect transistors (FETs) on SiO2/Si substrate fabricated via exfoliation have been demonstrated for the first time.…