High power Figure-of-Merit, 10.6-kV AlGaN/GaN lateral Schottky barrier diode with single channel and sub-100-μm anode-to-cathode spacing

Ru Xu, Peng Chen, Jing Zhou +13

GaN-based lateral Schottky diodes (SBDs) have attracted great attention for high-power applications due to its combined high electron mobility and large critical breakdown field. H…