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cond-mat.mes-hall2025
Spin-transport characteristics in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET): Bias dependence of the spin polarization in Si and magnetoresistance in spin-valve signals
Shoichi Sato, Masaaki Tanaka, Ryosho Nakane
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electr…
physics.app-ph2025
Spin injection in Si-based ferromagnetic tunnel junctions with MgO/MgAl2O4 barriers:Experimental and theoretical investigation of barrier thickness-dependent spin tunneling efficiency
Baisen Yu, Shoichi Sato, Masaaki Tanaka +1
We have experimentally and theoretically investigated the spin transport in Fe/Mg/MgO/MgAl2O4/n+-Si(001) ferromagnetic tunnel junctions on a Si substrate, by systematically varying…