3 papers
physics.app-ph2026
Efficient Analysis of Carrier Transport and TM-TE Emission in AlGaN UVC LEDs via Multi-band Localization Landscape Theory
Yu-Ming Chang, Ping-Jie Zhuang, Marcel Filoche +3
AlGaN-based UVC LEDs (220-250 nm) suffer from poor hole confinement and strain-induced |Z>-band dominance at high Al content (>60%), leading to increased TM emission and reduced ex…
physics.app-ph2025
The Influence of V-Defects, Leakage, and Random Alloy Fluctuations on the Carrier Transport in Red InGaN MQW LEDs
Huai-Chin Huang, Shih-Min Chen, Claude Weisbuch +2
Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies (IQEs) than violet, blue, and green InGaN LEDs due to a reduction in radiative recombinatio…
cond-mat.mtrl-sci2024
Utilizing the Janus MoSSe surface polarization in designing complementary metal-oxide-semiconductor field-effect transistors
Yun-Pin Chiu, Hsin-Wen Huang, Yuh-Renn Wu
Janus transition metal dichalcogenides (JTMDs) have attracted much attention because of their outstanding electronic and optical properties. The additional out-of-plane dipole in J…