Subhadip Das

most citedThickness dependent transition from the 1T

^{'}

to Weyl semimetal phase in ultrathin MoTe

_{2}

: Electrical transport, Noise and Raman studies

18 citations · 27 across the 2 of their papers we have counts for

collaborators

3 papers

cond-mat.mes-hall2021★ 18 cited

Thickness dependent transition from the 1T $^{'}$ to Weyl semimetal phase in ultrathin MoTe $_{2}$ : Electrical transport, Noise and Raman studies

Manabendra Kuiri, Subhadip Das, D. V. S. Muthu +2

Bulk 1T $^{'}$ -MoTe $_{2}$ shows a structural phase transition from 1T $^{'}$ to Weyl semimetallic (WSM) $T_{d}$ phase at $\sim$ 240 K. This phase transition and transport prope…

cond-mat.mes-hall2021★ 9 cited

Doping controlled Fano resonance in bilayer 1T $^{'}$ -ReS $_{2}$ : Raman experiments and first-principles theoretical analysis

Subhadip Das, Suchitra Prasad, Biswanath Chakraborty +6

In the bilayer ReS $_{2}$ channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broade…

cond-mat.mes-hall2020

Symmetry induced phonon renormalization in few layers of 2H-MoTe $_{2}$ transistors: Raman and first-principles studies

Subhadip Das, Koyendrila Debnath, Biswanath Chakraborty +5

Understanding of electron-phonon coupling (EPC) in two dimensional (2D) materials manifesting as phonon renormalization is essential to their possible applications in nanoelectroni…

Thickness dependent transition from the 1T′ to Weyl semimetal phase in ultrathin MoTe2​: Electrical transport, Noise and Raman studies

Doping controlled Fano resonance in bilayer 1T′-ReS2​: Raman experiments and first-principles theoretical analysis

Symmetry induced phonon renormalization in few layers of 2H-MoTe2​ transistors: Raman and first-principles studies

Thickness dependent transition from the 1T $^{'}$ to Weyl semimetal phase in ultrathin MoTe $_{2}$ : Electrical transport, Noise and Raman studies

Doping controlled Fano resonance in bilayer 1T $^{'}$ -ReS $_{2}$ : Raman experiments and first-principles theoretical analysis

Symmetry induced phonon renormalization in few layers of 2H-MoTe $_{2}$ transistors: Raman and first-principles studies