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20212026
most citedInfluences of ALD AlO on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

2 citations · 3 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2026

Band alignment of grafted diamond/GaN p-n heterojunctions interfaced with ALD Al2O3 and SiNx/Al2O3

Tsung-Han Tsai, Chenyu Wang, Jiarui Gong +14

Diamond and gallium nitride are complementary semiconductors for forming p-n junctions because of their respective doping limitations. Understanding the band alignment of grafted d…