Donghyeok Kim

activity

20212024

_{2}

_{3}

on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

2 citations · 3 across the 3 of their papers we have counts for

collaborators

3 papers

physics.app-ph2024★ 1 cited

Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Jie Zhou, Qiming Zhang, Jiarui Gong +14

Semiconductor heterojunctions are foundational to many advanced electronic and optoelectronic devices. However, achieving high-quality, lattice-mismatched interfaces remains challe…

physics.app-ph2023

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $β$ -Ga $_{2}$ O $_{3}$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…

physics.app-ph2021★ 2 cited

Influences of ALD Al $_{2}$ O $_{3}$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Jiarui Gong, Jisoo Kim, TienKhee Ng +7

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar tran…

Wafer-scale Semiconductor Grafting: Enabling High-Performance, Lattice-Mismatched Heterojunctions

Monocrystalline Si/β-Ga2​O3​ p-n heterojunction diodes fabricated via grafting

Influences of ALD Al2​O3​ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Monocrystalline Si/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes fabricated via grafting

Influences of ALD Al $_{2}$ O $_{3}$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors