T. Ng

most citedInfluences of ALD Al

_{2}

_{3}

on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

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physics.app-ph2021★ 2 cited

Influences of ALD Al $_{2}$ O $_{3}$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Jiarui Gong, Jisoo Kim, TienKhee Ng +7

Due to the lack of effective p-type doping in GaN and the adverse effects of surface band-bending of GaN on electron transport, developing practical GaN heterojunction bipolar tran…

Influences of ALD Al2​O3​ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors

Influences of ALD Al $_{2}$ O $_{3}$ on the surface band-bending of c-plane, Ga-face GaN and the implication to GaN-collector npn heterojunction bipolar transistors