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20212026
most citedEnhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

41 citations · 99 across the 9 of their papers we have counts for

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5 papers · 1 filter

cond-mat.mtrl-sci2026★ 1 cited

Efficient and Robust p-type Transistor based on Ultra-wide-bandgap Semiconductor

Kaijian Xing, Zherui Yang, Weiyao Zhao +17

The p-type transistor is an indispensable component of semiconductor technology, enabling complementary operation with n-channel transistors for computation, storage, and communica…

cond-mat.mtrl-sci2024★ 3 cited

Electrical Control Grain Dimensionality with Multilevel Magnetic Anisotropy

Shengyao Li, Sabpreet Bhatti, Siew Lang Teo +11

In alignment with the increasing demand for larger storage capacity and longer data retention, electrical control of magnetic anisotropy has been a research focus in the realm of s…

cond-mat.mtrl-sci2021★ 4 cited

Reversible modulation of metal-insulator transition in VO2 via chemically-induced oxygen migration

Kun Han, Hanyu Wang, Liang Wu +6

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of gr…

cond-mat.mtrl-sci2021★ 41 cited

Enhanced metal-insulator transition in freestanding VO2 down to 5 nm thickness

Kun Han, Liang Wu, Yu Cao +9

Ultrathin freestanding membranes with a pronounced metal-insulator transition (MIT) provides huge potential in future flexible electronic applications as well as a unique aspect of…

cond-mat.mtrl-sci2021★ 3 cited

Bipolar conduction and giant positive magnetoresistance in doped metallic titanium oxide heterostructures

Ke Huang, Tao Wang, Mengjia Jin +11

Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electroni…