9 citations · 10 across the 4 of their papers we have counts for
4 papers
Spatially resolved random telegraph fluctuations of a single trap at the Si/SiO2 interface
Megan Cowie, Procopios C. Constantinou, Neil J. Curson +2
We use electrostatic force microscopy to spatially resolve random telegraph noise at the Si/SiO interface. Our measurements demonstrate that two-state fluctuations are localize…
Spatially resolved dielectric loss at the Si/SiO interface
Megan Cowie, Taylor J. Z. Stock, Procopios C. Constantinou +2
The Si/SiO interface is populated by isolated trap states which modify its electronic properties. These traps are of critical interest for the development of semiconductor-base…
How high is a MoSe monolayer?
Rikke Plougmann, Megan Cowie, Yacine Benkirane +3
Transition metal dichalcogenides (TMDCs) have attracted significant attention for optoelectronic, photovoltaic and photoelectrochemical applications. The properties of TMDCs are hi…
Charge carrier inversion in a doped thin film organic semiconductor island
Zeno Schumacher, Rasa Rejali, Megan Cowie +3
Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on…