Mobinul Haque

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physics.app-ph2024

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque +2

More than 3 kV breakdown voltage was demonstrated in monolithic bidirectional GaN HEMTs for the first time having potential applications in 1200V or 1700V-class novel power convert…

physics.app-ph2024

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $> 1 0^{15} / c m^{3}$ free carrier concentration using close-coupled showerhead MOCVD reactor

Swarnav Mukhopadhyay, Parthasarathy Seshadri, Mobinul Haque +6

Thin Si-doped Al-rich (Al>0.85) regrown Al(Ga)N layers were deposited on AlN on Sapphire template using metal-organic chemical vapor deposition (MOCVD) techniques. The optimization…

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with >1015/cm3 free carrier concentration using close-coupled showerhead MOCVD reactor

Demonstration of Si-doped Al-rich thin regrown Al(Ga)N films on AlN on sapphire templates with $> 1 0^{15} / c m^{3}$ free carrier concentration using close-coupled showerhead MOCVD reactor