Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

Guy Tsamo, Alla G. Nastovjak, Nataliya L. Shwartz +9

In this work, we present conception and study of gallium nitride (GaN) nanostructures on a gallium arsenide (GaAs) substrate with (111)A orientation. The nanostructures were design…