Antônio Jefferson

collaborators

2 papers

cond-mat.mtrl-sci2024

Role of native point defects and Hg impurities in the electronic properties of Bi $_{4}$ I $_{4}$

Gustavo H. Cassemiro, C. David Hinostroza, Leandro Rodrigues de Faria +8

We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi $_{4}$ I $_{4}$ ). Our transport measurements after annealing at different temp…

cond-mat.mtrl-sci2024

Structural investigation of the quasi-one-dimensional topological insulator Bi $_{4}$ I $_{4}$

C. David Hinostroza, Leandro Rodrigues de Faria, Gustavo H. Cassemiro +4

The bismuth-halide Bi $_{4}$ I $_{4}$ undergoes a structural transition around $T_{P} \sim 300$ K, which separates a high-temperature $I^^{2}$ phase ( $T > T_{P}$ ) from a low-temperature $I^\pm$ phase ($…

Role of native point defects and Hg impurities in the electronic properties of Bi4​I4​

Structural investigation of the quasi-one-dimensional topological insulator Bi4​I4​

Role of native point defects and Hg impurities in the electronic properties of Bi $_{4}$ I $_{4}$

Structural investigation of the quasi-one-dimensional topological insulator Bi $_{4}$ I $_{4}$