activity
20212023
most citedProbing charge noise in few electron CMOS quantum dots

4 citations · 6 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2023

Broadband parametric amplification for multiplexed SiMOS quantum dot signals

Victor Elhomsy, Luca Planat, David J. Niegemann +14

Spins in semiconductor quantum dots hold great promise as building blocks of quantum processors. Trapping them in SiMOS transistor-like devices eases future industrial scale fabric…

cond-mat.mes-hall2023★ 2 cited

Electrical manipulation of a single electron spin in CMOS with micromagnet and spin-valley coupling

Bernhard Klemt, Victor El-Homsy, Martin Nurizzo +16

For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from a…

cond-mat.mes-hall2022★ 4 cited

Probing charge noise in few electron CMOS quantum dots

Cameron Spence, Bruna Cardoso-Paz, Vincent Michal +14

Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qu…

cond-mat.mes-hall2022

Parity and singlet-triplet high fidelity readout in a silicon double quantum dot at 0.5 K

David J. Niegemann, Victor El-Homsy, Baptiste Jadot +14

We demonstrate singlet-triplet readout and parity readout allowing to distinguish T0 and the polarized triplet states. We achieve high fidelity spin readout with an average fidelit…

cond-mat.mes-hall2021

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt +16

One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is…