collaborators

1 paper

cond-mat.mes-hall2024

Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors

Kuan-Chu Chen, Clement Godfrin, George Simion +8

The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a d…