Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

Patrick Fiorenza, Marco Zignale, Marco Camalleri +5

In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide (NO) on the properties of SiO2/4H-SiC interfaces in n-channel lateral MOSFETs are i…