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Nanosecond timescale plasticity in shock-compressed polycrystalline MgO: evidence for transition in mechanism above 100 GPa
A. Chakraborti, H. Ginestet, F. Bertrand +80
The mechanical properties of ceramics under extreme conditions directly impact applications ranging from shielding spacecrafts, designing plasma facing materials in nuclear fusion…
Volume Collapse Without a Structural Transition in Shock-Compressed FeO
C. Crépisson, T. Stevens, M. Fitzgerald +121
We report x-ray diffraction and emission spectroscopy of FeO under laser-driven shock compression between 31-199 GPa. FeO retains the B1 (rocksalt) structure along the Hugoniot to…
Spin crossover in FeO under shock compression
Lélia Libon, Alessandra Ravasio, Silvia Pandolfi +17
FeO (wüstite), which exhibits complex electronic and structural properties with increasing pressure and temperature, is a key mineralogical phase for understanding deep planetary i…
Femtosecond temperature measurements of laser-shocked copper deduced from the intensity of the x-ray thermal diffuse scattering
J. S. Wark, D. J. Peake, T. Stevens +122
We present 50-fs, single-shot measurements of the x-ray thermal diffuse scattering (TDS) from copper foils that have been shocked via nanosecond laser-ablation up to pressures abov…
Phase transition kinetics revealed by in situ X-ray diffraction in laser-heated dynamic diamond anvil cells
Matthew Ricks, Arianna E. Gleason, Francesca Miozzi +7
We report on a novel approach to dynamic compression of materials that bridges the gap between previous static- and dynamic- compression techniques, allowing to explore a wide rang…
Multi-scale characterization of hexagonal Si-4H: a hierarchical nanostructured material
Silvia Pandolfi, Shiteng Zhao, John Turner +9
In this work we present a detailed structural characterization of Si-4H, a newly discovered bulk form of hexagonal silicon (Si) with potential optoelectronic applications. Using mu…
Atomistic deformation mechanism of silicon under laser-driven shock compression
S. Pandolfi, S. Brennan Brown, P. G. Stubley +10
Silicon (Si) is one of the most abundant elements on Earth, and it is the most important and widely used semiconductor, constituting the basis of modern electronic devices. Despite…