2 papers
cond-mat.mes-hall2024
Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Anton Faustmann, Patrick Liebisch, Benjamin Bennemann +6
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As…
cond-mat.mes-hall2021
Te-doped selective-area grown InAs nanowires for superconducting hybrid devices
Pujitha Perla, Anton Faustmann, Sebastian Koelling +11
Semiconductor nanowires have emerged as versatile components in superconducting hybrid devices for Majorana physics and quantum computing. The transport properties of nanowires can…