Low-Frequency 1/f Noise Characteristics of Ultra-Thin AlO${}_x$-Based Resistive Switching Memory Devices with Magneto-Resistive Responses

Jhen-Yong Hong, Chun-Yen Chen, Dah-Chin Ling +3

Low-frequency 1/f voltage noise has been employed to probe stochastic charge dynamics in AlO${}_x$-based non-volatile resistive memory devices exhibiting both resistive switching (…