9 citations · 10 across the 5 of their papers we have counts for
5 papers
Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations
Jonathan Backman, Youseung Lee, Mathieu Luisier
This paper presents an ab initio methodology to account for electron-phonon interactions in 2D materials, focusing on transition metal dichalcogenides (TMDCs). It combines density…
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
Mathieu Luisier, Cedric Klinkert, Sara Fiore +4
Two-dimensional (2D) materials are particularly attractive to build the channel of next-generation field-effect transistors (FETs) with gate lengths below 10-15 nm. Because the 2D…
Ab initio Self-consistent GW Calculations in Non-Equilibrium Devices: Auger Recombination and Electron-Electron Scattering
Leonard Deuschle, Jonathan Backman, Mathieu Luisier +1
We present first-principles quantum transport simulations of single-walled carbon nanotubes based on the NEGF method and including carrier-carrier interactions within the self-cons…
Asymmetrical contact scaling and measurements in MoS2 FETs
Zhihui Cheng, Jonathan Backman, Huairuo Zhang +8
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better…
Impact of Orientation Misalignments on Black Phosphorus Ultrascaled Field-effect Transistors
Cedric Klinkert, Sara Fiore, Jonathan Backmann +2
Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potentia…