3 papers
cond-mat.mes-hall2024
Noise Spectroscopy and Electrical Transport in NbO2 Memristors with Dual Resistive Switching
Nitin Kumar, Jong E. Han, Karsten Beckmann +2
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing syst…
physics.app-ph2024
Enhancement in neuromorphic NbO2 memristive device switching at cryogenic temperatures
Ted Mburu, Zachary R. Robinson, Karsten Beckmann +4
The electrical properties and performance characteristics of niobium dioxide (NbO)-based memristive devices are examined at cryogenic temperatures. Sub-stoichiometric…
physics.app-ph2024
Measurement of the Crystallization and Phase Transition of Niobium Dioxide Thin-Films for Neuromorphic Computing Applications Using a Tube Furnace Optical Transmission System
Zachary R. Robinson, Karsten Beckmann, James Michels +7
Significant research has focused on low-power stochastic devices built from memristive materials. These devices foster neuromorphic approaches to computational efficiency enhanceme…