44 citations · 71 across the 4 of their papers we have counts for
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physics.app-ph2023★ 44 cited
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
physics.app-ph2022★ 10 cited
HZO-based FerroNEMS MAC for In-Memory Computing
Shubham Jadhav, Ved Gund, Benyamin Davaji +4
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computi…