44 citations · 71 across the 3 of their papers we have counts for
3 papers
Ferroelectric AlBN Films by Molecular Beam Epitaxy
Chandrashekhar Savant, Ved Gund, Kazuki Nomoto +13
We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits…
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
J. Casamento, K. Nomoto, T. S. Nguyen +11
We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a n…
HZO-based FerroNEMS MAC for In-Memory Computing
Shubham Jadhav, Ved Gund, Benyamin Davaji +4
This paper demonstrates a hafnium zirconium oxide (HZO)-based ferroelectric NEMS unimorph as the fundamental building block for very low-energy capacitive readout in-memory computi…