3 papers
physics.optics2026
AlGaAs nanowires as a universal platform for GaAs, InGaAs, and InAs quantum dots
Rohan Radhakrishnan, Rodion Reznik, Gilles Patriarche +5
Optical quantum dots (QDs) are central to photonic quantum technologies, with fabrication approaches tailored to different spectral ranges. A key challenge, however, is the realiza…
physics.optics2024
Influence of capping layer growth mode on the photoluminescence of InAs quantum dots in silicon
Vera V. Lendyashova, Igor V. Ilkiv, Vadim G. Talalaev +3
The influence of growth regimes of the silicon capping layer on the optical properties of heterostructures with submonolayer InAs quantum dots embedded in a silicon matrix has been…
physics.app-ph2024
Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices
Vera Lendyashova, Igor Ilkiv, Bogdan Borodin +4
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a s…