A 137.5 TOPS/W SRAM Compute-in-Memory Macro with 9-b Memory Cell-Embedded ADCs and Signal Margin Enhancement Techniques for AI Edge Applications

Xiaomeng Wang, Fengshi Tian, Xizi Chen +7

In this paper, we propose a high-precision SRAM-based CIM macro that can perform 4x4-bit MAC operations and yield 9-bit signed output. The inherent discharge branches of SRAM cells…