collaborators

5 papers

quant-ph2026

zenDot: An LLM-integrated quantum TCAD platform for semiconductor quantum-device design and optimization automation

Zeheng Wang, Yan Liu, Yue Hao +1

Semiconductor quantum-device design still lacks an integrated Technology Computer-Aided Design (TCAD)-like environment that connects material geometry, quantum many-body simulation…

cond-mat.mes-hall2026

A Unified Electrostatic-to-Spin Framework for Asymmetric Multi-Gate CMOS Quantum Devices

Zeheng Wang, Yan Liu, Yue Hao +1

In advanced complementary metal-oxide-semiconductor (CMOS) quantum chips, compact gate stacks make it difficult to connect lithographic geometry, electrostatic confinement and many…

cond-mat.mtrl-sci2026

A ferroelectric junction transistor memory made from switchable van der Waals p-n heterojunctions

Baoyu Wang, Lingrui Zou, Tao Wang +18

Van der Waals (vdW) p-n heterojunctions are important building blocks for advanced electronics and optoelectronics, in which high-quality heterojunctions essentially determine devi…

cond-mat.mtrl-sci2025

Wurtzite AlScN/AlN Superlattice Ferroelectrics Enable Endurance Beyond 1010 Cycles

Ruiqing Wang, Feng Zhu, Haoji Qian +9

Wurtzite ferroelectrics are rapidly emerging as a promising material class for next-generation non-volatile memory technologies, owing to their large remanent polarization, intrins…

cond-mat.mtrl-sci2025

Ultralow-pressure mechanical-motion switching of ferroelectric polarization

Baoyu Wang, Xin He, Jianjun Luo +20

Ferroelectric polarization switching, achieved by mechanical forces, enables the storage of stress information in ferroelectrics, and holds promise for human-interfacing applicatio…