5 papers
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Epitaxial growth and semiconductor properties of NiGa2O4 spinel for Ga2O3/NiO interfaces
Kingsley Egbo, Emily M. Garrity, Shivashree Shivamade Gowda +8
Unintentionally formed interfacial layers are ubiquitous in semiconductor devices that operate at extreme conditions. However, these layers' structure and properties often remain u…
Emerging ultra-wide band gap semiconductors for future high-frequency electronics
Emily M. Garrity, Theodora Ciobanu, Andriy Zakutayev +1
To meet the growing demands of advanced electronic systems, next-generation power and RF semiconductor devices must operate efficiently at higher power levels and switching frequen…
Effective bands and band-like electron transport in amorphous solids
Matthew Jankousky, Dimitar Pashov, Ross E. Larsen +3
The localization of electrons caused by atomic disorder is a well-known phenomenon. However, what circumstances allow electrons to remain delocalized and retain band-like character…
Ion exchange synthesizes layered polymorphs of MgZrN and MgHfN, two metastable semiconductors
Christopher L. Rom, Matthew Jankousky, Maxwell Q. Phan +5
The synthesis of ternary nitrides is uniquely difficult, in large part because elemental N is relatively inert. However, lithium reacts readily with other metals and N, mak…