17 papers
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
M. Brooks Tellekamp, Drew Haven, David Joyce +7
The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry , where anisotropy impacts bulk and thin film synthesis, material p…
Composition-dependent Thin-film Synthesis of Layered Ternary Iron Nitrides FeMN2 (M = W, Mo)
Baptiste Julien, Liam A. V. Nagle-Cocco, Yuwei Yang +3
Ternary transition-metal nitrides with layered crystal structures host anisotropic bonding and reduced dimensionality that may enable unconventional electronic and magnetic behavio…
Synthesis and properties of bulk MgWN in a wurtzite-derived structure
Anna A. Berseneva, Christopher L. Rom, Layton Rudolph +5
Experimental synthesis of theoretically predicted materials with controlled elemental coordination environments can lead to realization of useful properties, such as facile ion tra…
Systematic comparison of approximations and functionals in first-principle calculations of aluminum-based III-V ferroelectric nitrides
Alejandro Mercado Tejerina, Peng Chen, Keisuke Yazawa +3
We revisit first-principles predictions of structural, ferroelectric, and electronic properties in aluminum-based III-V nitride alloys, focusing on Al1-xScxN and Al1-xBxN. Using de…
Autonomous Reliability Qualification of GaO-based diode sensors via Safe Active Learning
Davi Febba, William A. Callahan, Anna Sacchi +1
Ultra-wide bandgap (UWBG) GaO is a promising semiconductor for high-power and high-temperature electronics. Reliable qualification of these devices under extreme operating…