3 papers
cond-mat.mtrl-sci2026
Revealing the Atomic Structure of NiO/GaO Interfaces
Michelle A. Smeaton, Krishna Acharya, Anna Sacchi +5
NiO/GaO heterojunctions have garnered significant attention for use in power electronics due to the ultrawide bandgap and wafer-scale availability of GaO an…
cond-mat.mtrl-sci2026
Fast Homoepitaxy on (100) \b{eta}-Ga2O3 Substrates with Large Grown-In Offcut
M. Brooks Tellekamp, Drew Haven, David Joyce +7
The choice of crystalline orientation and offcut angle is non-trivial for low-symmetry , where anisotropy impacts bulk and thin film synthesis, material p…
physics.app-ph2026
Autonomous Reliability Qualification of GaO-based diode sensors via Safe Active Learning
Davi Febba, William A. Callahan, Anna Sacchi +1
Ultra-wide bandgap (UWBG) GaO is a promising semiconductor for high-power and high-temperature electronics. Reliable qualification of these devices under extreme operating…