Philip E. Batson

most citedElectronic structure of Humble defects in Ge and Ge

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1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mtrl-sci2022

Simultaneous imaging of dopants and free charge carriers by STEM-EELS

Hongbin Yang, Andrea Konečná, Xianghan Xu +4

Doping inhomogeneities in solids are not uncommon, but their microscopic observation and understanding are limited due to the lack of bulk-sensitive experimental techniques with hi…

cond-mat.mtrl-sci2022★ 1 cited

Electronic structure of Humble defects in Ge and Ge $_{0.8}$ Si $_{0.2}$

Shang Ren, Hongbin Yang, Sobhit Singh +3

The group-IV diamond-structure elements are known to host a variety of planar defects, including {001} planar defects in C and {001}, {111} and {113} planar defects in Si and Ge. A…

Simultaneous imaging of dopants and free charge carriers by STEM-EELS

Electronic structure of Humble defects in Ge and Ge0.8​Si0.2​

Electronic structure of Humble defects in Ge and Ge $_{0.8}$ Si $_{0.2}$