most citedMolecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures

15 citations · 25 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2018★ 10 cited

Wafer-scale all-epitaxial GeSn-on-insulator on Si(111) by molecular beam epitaxy

Krista R Khiangte, Jaswant S Rathore, J. Schmidt +3

All epitaxial GeSn-on-insulator (GeSnOI) heterostructures have been realized by conventional molecular beam epitaxy of both GeSn and a thin Gd2O3 insulating layer, on Si(111) subst…

cond-mat.mtrl-sci2018★ 15 cited

Molecular beam epitaxy and defect structure of Ge (111)/epi-Gd2O3 (111) /Si (111) heterostructures

Krista R Khiangte, Jaswant S Rathore, Sudipta Das +5

Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural…