2 papers
physics.app-ph2018
Gate-tunable memristors from monolayer MoS2
Vinod K. Sangwan, Hong-Sub Lee, Mark C. Hersam
We report here gate-tunable memristors based on monolayer MoS2 grown by chemical vapor deposition (CVD). These memristors are fabricated in a field-effect geometry with the channel…
cond-mat.mtrl-sci2018
Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2
Vinod K. Sangwan, Hong-Sub Lee, Hadallia Bergeron +4
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise f…