2 papers
physics.app-ph2018
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…
cond-mat.mtrl-sci2016
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
V. X. Ho, T. V. Dao, H. X. Jiang +4
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical…